2010. 6. 17 1/4 semiconductor technical data KU048N03D n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converter. features h v dss =30v, i d =79a. h low drain to source on-state resistance. : r ds(on) =4.8m ? (max.) @ v gs =10v : r ds(on) =6.5m ? (max.) @ v gs =4.5v maximum rating (ta=25 ? ? unless otherwise noted) dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l 1. gate 2. drain 3. source m 0.96 max 0.90 max e e m n h 0.70 min n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j ku048n03 d marking type name lot no note 1) r thjc means that the infinite heat sink is mounted. note 2) surface mounted on 1 ? ? 1 ? pad of 2 oz copper. note 3) l=18 h, i as =84a, v dd =15v, v gs =10v, starting t j =25 ? pin connection (top view) u g u g characteristic symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gss ? 20 v drain current dc@t c =25 ? (note1) i d 84 a pulsed (note2) i dp 336 single pulsed avalanche energy (note3) e as 124 mj drain power dissipation @t c =25 ? (note1) p d 60 w @ta=25 ? (note2) 3.8 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to case (note1) r thjc 2.1 ? /w thermal resistance, junction to ambient (note2) r thja 40 ? /w
2010. 6. 17 2/4 KU048N03D revision no : 0 electrical characteristics (ta=25 ? ? ) characteristic symbol test condition min. typ. max. unit static drain to source breakdown voltage bv dss v gs =0v, i d =250 a 30 - - v drain cut-off current i dss v gs =0v, v ds =30v - - 1 a gate to source leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate to source threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain to source on resistance r ds(on) v gs =10v, i d =30a (note4) - 3.0 4.8 m ? v gs =4.5v, i d =30a (note4) - 4.0 6.5 forward transconductance g fs v ds =5v, i d =30a (note4) - 75 - s dynamic input capacitance c iss v ds =15v, f=1mhz, v gs =0v - 2772 - pf ouput capacitance c oss - 550 - reverse transfer capacitance c rss - 398 - gate resistance r g f=1mhz - 3.5 - ? total gate charge v gs =10v q g v ds =15v, v gs =10v, i d =30a (note4) - 64.5 - nc v gs =4.5v q g - 32.2 - gate to source charge q gs - 8.2 - gate to drain charge q gd - 14.7 - turn-on delay time t d(on) v dd =15v, v gs =10v i d =30a, r g =1.6 ? (note4) - 11.6 - ns turn-on rise time t r - 16.4 - turn-off delay time t d(off) - 57.8 - turn-off fall time t f - 19.8 - source to drain diode ratings source to drain forward voltage v sd v gs =0v, i s =30a (note4) - 0.8 1.2 v reverse recovery time t rr i s =30a, di/dt=100a/ k - 26.7 - ns reverse recovered charge q rr i s =30a, di/dt=100a/ k - 17.6 - nc note 4) pulse test : pulse width <300 k , duty cycle < 2%
2010. 6. 17 3/4 KU048N03D revision no : 0 fig1. i d - v ds drain to source voltage v ds (v) 0 0 0.5 40 80 20 60 100 1.0 1.5 2.0 2.5 3.0 fig6. i s - v sd drain current i d (a) fig4. r ds(on) - t j -75 -50 -25 25 50 75 175 150 125 100 0 reverse drain current i s (a) 10 -1 10 1 10 0 10 2 10 3 0.6 1.2 1.0 0.4 0.8 0.2 source to drain voltage v sd (v) normalized gate to source threshold voltage fig5. v th - t j -75 -50 -25 0.4 0.6 0.2 1.6 0.8 1.0 1.4 1.2 0.6 0.8 0.2 0.4 1.0 1.2 1.8 1.4 2.0 1.6 050100 25 175 150 125 75 normalized on resistance r ds(on) junction temperature tj ( ) c junction temperature tj ( ) c 5.0v 3.0v 3.5v 4.0v 4.5v v ds = v gs, i d = 250 a t j =25 c t j =-55 c t j =150 c v gs =10v v gs =10v, i d =30a v gs =4.5v, i d =30a 0 6 8 2 4 10 100 0 20406080 v gs =4.5v v gs =10v drain current i d (a) drain to source on resistance r ds(on) (m ? ) fig2. r ds(on) - i d gate to source voltage v gs (v) 20 60 0 40 100 80 34 12 5 fig3. i d - v gs drain current i d (a) t j =25 c t j =-55 c t j =150 c v ds =5v
2010. 6. 17 4/4 KU048N03D revision no : 0 drain current i d (a) drain to source voltage v ds (v) fig10. safe operation area r ds(on) limit dc 10ms 1ms 100us c oss f=1mhz square wave pulse duration (sec) 10 1 10 0 10 1 10 -3 10 -2 10 -1 10 0 10 -4 fig11. transient thermal response curve 10 -1 10 -2 normalized effective transient thermal resistance t 1 t 2 p dm r thjc = 1.9 c/w single pluse 0.02 0.1 0.2 0.5 0.05 drain to source voltage v ds (v) capacitance c (pf) fig8. c - v ds 25 10 15 0 5 20 30 10 1 10 2 10 4 10 3 gate to charge q g (nc) 0 10 6 2 4 8 60 15 30 45 075 fig9. q g - v gs gate to source voltage v gs (v) v ds = 15 v , i d = 30 a c rss c iss v gs = 10v single pulse t c = 25 c 0.01 10 4 6 02 8 12 0 4 20 12 16 8 t j =150 c i d =30a t j =25 c gate to source voltage v gs (v) fig7. r ds(on) - v gs drain to source on resistance r ds(on) (m ? ) 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2
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